• DocumentCode
    2798680
  • Title

    Theoretical analysis of nonlinear gain effects in InGaAsP/InP quantum well lasers

  • Author

    Takahashi, T. ; Arakawa, Y.

  • Author_Institution
    University of Tokyo
  • fYear
    1990
  • fDate
    9-14 Sept. 1990
  • Firstpage
    96
  • Lastpage
    97
  • Keywords
    DH-HEMTs; Degradation; Gallium arsenide; Indium phosphide; Laser modes; Laser theory; Potential well; Quantum mechanics; Quantum well lasers; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
  • Conference_Location
    Davos, Switzerland
  • Type

    conf

  • DOI
    10.1109/ISLC.1990.764443
  • Filename
    764443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2798680