DocumentCode :
2798680
Title :
Theoretical analysis of nonlinear gain effects in InGaAsP/InP quantum well lasers
Author :
Takahashi, T. ; Arakawa, Y.
Author_Institution :
University of Tokyo
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
96
Lastpage :
97
Keywords :
DH-HEMTs; Degradation; Gallium arsenide; Indium phosphide; Laser modes; Laser theory; Potential well; Quantum mechanics; Quantum well lasers; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
Type :
conf
DOI :
10.1109/ISLC.1990.764443
Filename :
764443
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2798680
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