Comparisons of 6.5kV 25A Si IGBT and 10-kV SiC MOSFET in Solid-State Transformer application

Author

Wang, Gangyao ; Huang, Xing ; Wang, Jun ; Zhao, Tiefu ; Bhattacharya, Subhashish ; Huang, Alex Q.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

2010

fDate

12-16 Sept. 2010

Firstpage

100

Lastpage

104

Abstract

A 6.5 kV 25 A dual IGBT module is customized and packaged specially for high voltage low current application like solid state transformer and its characteristics and losses have been tested under the low current operation and compared with 10 kV SiC MOSFET. Based on the test results, the switching losses under different frequencies in a 20 kVA Solid-State Transformer (SST) has been calculated for both devices. The result shows 10 kV SiC MOSFET has 7-10 times higher switching frequency capability than 6.5 kV Si IGBT in the SST application.

Keywords

AC-AC power convertors; MOSFET; elemental semiconductors; insulated gate bipolar transistors; losses; power transformers; silicon; silicon compounds; wide band gap semiconductors; IGBT; MOSFET; Si; SiC; apparent power 20 kVA; current 25 A; high voltage low current application; solid state transformer application; switching loss; voltage 10 kV; voltage 6.5 kV; Insulated gate bipolar transistors; MOSFET circuits; Rectifiers; Silicon; Silicon carbide; Switches; Switching frequency; IGBT; SiC MOSFET; Solid state transformer;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2010 IEEE

Conference_Location

Atlanta, GA

Print_ISBN

978-1-4244-5286-6

Electronic_ISBN

978-1-4244-5287-3

Type

conf

DOI

10.1109/ECCE.2010.5618069

Filename

5618069