DocumentCode :
2799009
Title :
1.5/spl mu/ InGaAs/InGaAsP separate confinement multi-quantum well lasers grown by chemical beam epitaxy
Author :
Tsang, W.T. ; Wu, M.C. ; Tanbun-Ek, T. ; Logan, R.A. ; Sergent, A.M.
Author_Institution :
AT&T Bell Laboratories
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
150
Lastpage :
151
Keywords :
Chemical lasers; Epitaxial growth; Indium gallium arsenide; Laser beams; Molecular beam epitaxial growth; Power generation; Power lasers; Quantum well devices; Threshold current; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
Type :
conf
DOI :
10.1109/ISLC.1990.764467
Filename :
764467
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2799009
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