DocumentCode
2799009
Title
1.5/spl mu/ InGaAs/InGaAsP separate confinement multi-quantum well lasers grown by chemical beam epitaxy
Author
Tsang, W.T. ; Wu, M.C. ; Tanbun-Ek, T. ; Logan, R.A. ; Sergent, A.M.
Author_Institution
AT&T Bell Laboratories
fYear
1990
fDate
9-14 Sept. 1990
Firstpage
150
Lastpage
151
Keywords
Chemical lasers; Epitaxial growth; Indium gallium arsenide; Laser beams; Molecular beam epitaxial growth; Power generation; Power lasers; Quantum well devices; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location
Davos, Switzerland
Type
conf
DOI
10.1109/ISLC.1990.764467
Filename
764467
Link To Document