Radiation response of MOSFET´s parameters as a function of measurement temperature

Author

Belyakov, V.V. ; Zebrev, G.I. ; Shvetzov-Shilovsky, I.N. ; Useinov, R.G.

Author_Institution

Eng. Phys. Inst., Moscow, Russia

fYear

1997

fDate

15-19 Sep 1997

Firstpage

159

Lastpage

163

Abstract

The postirradiation response of the MOSFET´s transconductance and logarithmic slope has been studied as a function of measurement temperatures. It is found that the temperature dependence of the postirradiation change in transconductance cannot be accounted for by the occurrence of additional scattering centers. These results suggest that mainly an additional recharging through the radiation-induced interface traps rather than a change in microscopic mobility determine the postirradiation variation of transconductance. An analysis of the effect and a convenient procedure for parameter extraction are presented

Keywords

MOSFET; X-ray effects; carrier mobility; interface states; semiconductor device measurement; MOSFET; interface traps; logarithmic slope; measurement temperature dependence; mobility; parameter extraction; radiation response; scattering centers; transconductance; Capacitance; Density measurement; Electron mobility; Instruments; MOSFET circuits; Microscopy; Scattering; Temperature measurement; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on

Conference_Location

Cannes

Print_ISBN

0-7803-4071-X

Type

conf

DOI

10.1109/RADECS.1997.698878

Filename

698878