InP-based 1.3 μm and 1.55 μm short-cavity VCSELs suitable for telecom- and datacom-applications

Author

Müller, Michael ; Grasse, Christian ; Amann, Markus Christian

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany

fYear

2012

fDate

2-5 July 2012

Firstpage

1

Lastpage

4

Abstract

We review the state-of the art of long-wavelength VCSELs. Furthermore, the short-cavity concept which has already been successfully implemented in 1.55 μm devices is extended to 1.3 μm devices resulting in excellent static and dynamic device properties. In particular, high output powers of 1.8 mW at an ambient temperature of 80 °C, high differential quantum efficiencies up to 56% and wall-plug efficiencies up to 36% at room-temperature are reported. Small-signal modulation bandwidths in excess of 15 GHz are presented. The large-signal modulation at a bit-rate of 25 Gbps is investigated.

Keywords

III-V semiconductors; indium compounds; surface emitting lasers; InP; bit rate 25 Gbit/s; datacom-applications; dynamic device; frequency 15 GHz; high differential quantum efficiencies; large-signal modulation; power 1.8 mW; short-cavity VCSEL; short-cavity concept; small-signal modulation; static device; telecom-applications; temperature 80 C; wall-plug efficiencies; wavelength 1.3 mum; wavelength 1.55 mum; Bandwidth; Damping; Modulation; Optical fiber communication; Optical fiber devices; Temperature; Vertical cavity surface emitting lasers; InP; PON; Vertical-Cavity Surface-Emitting Laser (VCSEL); access networks; direct modulation; frequency response; optical communication; optical interconnects; semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2012 14th International Conference on

Conference_Location

Coventry

ISSN

2161-2056

Print_ISBN

978-1-4673-2228-7

Electronic_ISBN

2161-2056

Type

conf

DOI

10.1109/ICTON.2012.6254394

Filename

6254394