• DocumentCode
    2799163
  • Title

    Converter structure-based power loss and static thermal modeling of the press-pack IGBT-based three-level ANPC and HB VSCs applied to Multi-MW wind turbines

  • Author

    Senturk, Osman S. ; Helle, Lars ; Munk-Nielsen, Stig ; Rodriguez, Pedro ; Teodorescu, Ramus

  • Author_Institution
    Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark
  • fYear
    2010
  • fDate
    12-16 Sept. 2010
  • Firstpage
    2778
  • Lastpage
    2785
  • Abstract
    The wind turbine converters demand high power density due to nacelle space limitation and high reliability due to high maintenance cost. Once the converter topology with the semiconductor switch technology is selected, the converter power density and reliability are dependent on the component count and the switch thermal performance which is determined by the converter load profile and the converter structure. In this study, the converter-structure based power loss and thermal models are developed for the medium voltage full-scale 3L-ANPC-VSC and 3L-HB-VSC utilizing press-pack IGBT-diode pairs and interfacing a 6MW wind turbine to a medium voltage grid. The switching power loss models are built using the experimentally obtained switching power loss data from a full-scale 3L-ANPC-VSC leg. The static thermal models are developed considering the double-sided cooling of the switches by the cooling plates. For the experimental model verifications, a test setup with a single-phase full-scale 3L-ANPC-VSC is introduced. Using the power loss and thermal models, the switch junction temperatures are obtained on simulation for the wind turbine grid interface. The power density and reliability of the VSCs are discussed and compared with respect to these junction temperatures as well as the counts of press-pack switches, gate driver, and cooling plate.
  • Keywords
    insulated gate bipolar transistors; losses; power bipolar transistors; power convertors; power generation reliability; power semiconductor switches; wind turbines; 3L-ANPC-VSC; 3L-HB-VSC; converter power density; converter power reliability; converter structure-based power loss; converter topology; press-pack IGBT-based three-level ANPC; semiconductor switch technology; static thermal modeling; switching power loss; wind turbine converters; Insulated gate bipolar transistors; Power conversion; Reliability; Switches; Switching loss; Wind turbines; ANPC; HB; Press-pack IGBT; power density; power loss; reliability; thermal model; wind turbine;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2010 IEEE
  • Conference_Location
    Atlanta, GA
  • Print_ISBN
    978-1-4244-5286-6
  • Electronic_ISBN
    978-1-4244-5287-3
  • Type

    conf

  • DOI
    10.1109/ECCE.2010.5618079
  • Filename
    5618079