Threshold reduction and CW operation of LPE grown GaInAsP/AlGaAs red-light injection lasers with the 670nm wavelength

Author

Chong, T.-H. ; Kishino, K.

Author_Institution

Sophia University

fYear

1990

fDate

9-14 Sept. 1990

Firstpage

176

Lastpage

177

Keywords

Doping; Electrons; Gallium arsenide; Laser modes; Laser theory; Power generation; Substrates; Temperature; Threshold current; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International

Conference_Location

Davos, Switzerland

Type

DOI

10.1109/ISLC.1990.764478

Filename

764478

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