Title :
Threshold reduction and CW operation of LPE grown GaInAsP/AlGaAs red-light injection lasers with the 670nm wavelength
Author :
Chong, T.-H. ; Kishino, K.
Author_Institution :
Sophia University
Keywords :
Doping; Electrons; Gallium arsenide; Laser modes; Laser theory; Power generation; Substrates; Temperature; Threshold current; Zinc;
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
DOI :
10.1109/ISLC.1990.764478
