DocumentCode
2799257
Title
Threshold-current-analysis of InGaAs/InGaAsP multi-quantum-well-separate- confinement-lasers
Author
Rosenzweig, M. ; Moehrle, M. ; Dueser, H. ; Fidorra, F. ; Venghaus, H.
Author_Institution
Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH
fYear
1990
fDate
9-14 Sept. 1990
Firstpage
186
Lastpage
187
Keywords
Current density; DH-HEMTs; Diode lasers; Frequency response; Indium gallium arsenide; Optical saturation; Quantum well devices; Quantum well lasers; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location
Davos, Switzerland
Type
conf
DOI
10.1109/ISLC.1990.764483
Filename
764483
Link To Document