• DocumentCode
    2799257
  • Title

    Threshold-current-analysis of InGaAs/InGaAsP multi-quantum-well-separate- confinement-lasers

  • Author

    Rosenzweig, M. ; Moehrle, M. ; Dueser, H. ; Fidorra, F. ; Venghaus, H.

  • Author_Institution
    Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH
  • fYear
    1990
  • fDate
    9-14 Sept. 1990
  • Firstpage
    186
  • Lastpage
    187
  • Keywords
    Current density; DH-HEMTs; Diode lasers; Frequency response; Indium gallium arsenide; Optical saturation; Quantum well devices; Quantum well lasers; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
  • Conference_Location
    Davos, Switzerland
  • Type

    conf

  • DOI
    10.1109/ISLC.1990.764483
  • Filename
    764483