DocumentCode :
2799271
Title :
Gain and absorption in InGaAs/InGaAsP and InGaAs/InGaAlAs SCMQW laser structures
Author :
Fuchs, G. ; Hoerer, J. ; Hangleiter, A. ; Goldstein, L. ; Glew, R.
Author_Institution :
Universitaet Stuttgart
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
188
Lastpage :
189
Keywords :
Absorption; Charge carrier density; Charge carrier processes; Density measurement; Free electron lasers; Gain measurement; High speed optical techniques; Indium gallium arsenide; Performance gain; Quantum well devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
Type :
conf
DOI :
10.1109/ISLC.1990.764484
Filename :
764484
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2799271
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