DocumentCode
2799392
Title
HBT IC technologies and applications in Japan
Author
Hirayama, Masahiro ; Honjo, Kazuhiko ; Obara, Masao ; Yokoyama, Naoki
Author_Institution
NTT LSI Lab., Atsugi, Japan
fYear
1991
fDate
20-23 Oct. 1991
Firstpage
3
Lastpage
6
Abstract
The HBT ICs now being developed in Japan will be mainly applied to optical communication systems for broadband digital networks. The authors have already confirmed IC performance of up to 10 Gb/s operation and development for microwave systems is getting underway. Market size is estimated from approximate figures of systems in use.<>
Keywords
bipolar integrated circuits; heterojunction bipolar transistors; integrated circuit technology; 10 Gbit/s; HBT ICs; IC technologies; Japan; Application specific integrated circuits; Fabrication; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; MESFETs; National electric code; Research and development; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-0196-X
Type
conf
DOI
10.1109/GAAS.1991.172619
Filename
172619
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