Title :
HBT application prospects in the US: where and when?
Author :
Asbeck, P.M. ; Chang, M.F. ; Corcoran, J.J. ; Jensen, J.F. ; Nottenburg, R.N. ; Oki, A. ; Yuan, H.T.
Author_Institution :
California Univ., San Diego, CA, USA
Abstract :
A review is presented of the present status of III-V HBT technology in the US, in both laboratory and manufacturing contexts. A definition of the most important applications for HBTs is presented. An assessment is made of the future of the technology, drawing on experiences with other III-IV technologies.<>
Keywords :
III-V semiconductors; bipolar integrated circuits; heterojunction bipolar transistors; integrated circuit technology; HBT technology; III-IV technologies; USA; Circuits; Contact resistance; Costs; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Low voltage; MOCVD; Microwave devices; Molecular beam epitaxial growth;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172620
