Visible light response of tin oxide nanobelts

Author

Kumar, Surajit ; Shin, Heungjoo ; Chen, Yu-Bin ; Kong, Xiangyang ; Wang, Zhong Lin ; Zhang, Zhuomin ; Hesketh, Peter J.

Author_Institution

Georgia Inst. of Technol., Atlanta

fYear

2007

fDate

21-25 Jan. 2007

Firstpage

247

Lastpage

250

Abstract

In the present work we report the effect of visible (VIS) light on the conductivity of SnO₂ nanobelts. The existence of visible light effect is unusual, since bulk SnO₂ is a wide band gap semiconductor. Two types of nanobelt alignment/trapping methods were used in fabricating devices for study of the visible light effect. Fluid flow alignment was used for making individual nanobelt devices, while AC dielectrophoresis was used to trap multiple nanobelts. DC current passing through the SnO₂ nanobelt devices was monitored under VIS and UV light illumination. Visible photoluminescence was also observed in the nanobelt samples.

Keywords

electrophoresis; nanotechnology; photoluminescence; tin compounds; wide band gap semiconductors; AC dielectrophoresis; SnO₂; UV light illumination; VIS illumination; fluid flow alignment; nanobelt alignment; nanobelt devices; nanobelt trapping; tin oxide nanobelts; visible light effect; visible light response; visible photoluminescence; wide band gap semiconductor; Assembly; Chemicals; Dielectrophoresis; Electrodes; Fluid flow; Materials science and technology; Nanobioscience; Nanoscale devices; Nanowires; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on

Conference_Location

Hyogo

ISSN

1084-6999

Print_ISBN

978-1-4244-095-5

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2007.4433101

Filename

4433101