A Novel Barrier Controlled Tunnel FET

Author

Hao Wang ; Sheng Chang ; Yue Hu ; Hongyu He ; Jin He ; Qijun Huang ; He, F. ; Gaofeng Wang

Author_Institution

Sch. of Electron. Eng. & Comput. Sci., Peking Univ., Beijing, China

Volume

35

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

798

Lastpage

800

Abstract

A novel structure of tunnel field-effect transistor (FET) is introduced with the gate composed of three segments of different work functions. The tunnel current is controlled by an in channel potential barrier as well as the source-channel tunnel junction bandgap, which combines the merits of both bandgap-controlled tunnel FET and barrier-controlled traditional MOSFET. Intuitive explanation is provided for this novel device structure. The performance enhancement is confirmed by numerical simulation with carbon nanotube as the channel material. This structure is especially suitable for bandgap tunable ballistic transport materials (e.g., carbon nanotube and graphene nanoribbon).

Keywords

ballistic transport; carbon nanotube field effect transistors; tunnel transistors; work function; MOSFET; bandgap tunable ballistic transport materials; barrier controlled tunnel FET; carbon nanotube; channel material; source channel tunnel junction bandgap; tunnel current; tunnel field effect transistor; work functions; Carbon nanotubes; Educational institutions; Field effect transistors; Logic gates; Materials; Photonic band gap; Tunnel field effect transistor (TFET); barrier controlled device; carbon nanotube (CNT); numerical simulation; numerical simulation.; work function;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2325058

Filename

6823680