Title :
A double balanced 6-18 GHz GaAs MMIC mixer
Author :
Maesel, M. ; Ou, W. ; Panelli, J. ; Archer, J. ; Bechtel, G. ; Hamilton, R.
Author_Institution :
Litton Solid State Div., Santa Clara, CA, USA
Abstract :
A double balanced 6-18 GHz GaAs MMIC mixer was designed, fabricated, and tested. The mixer utilized two coupled-line baluns and four GaAs Schottky diodes. The mixer was fabricated on a 400- mu m GaAs substrate without backside processing or via-holes. It has a typical conversion loss of 7.5 dB over the RF and LO bandwidth of 6-18 GHz and a DC-1.5 GHz IF. Processing of the MMIC mixer is compatible with that of a MESFET based MMIC, such that integration of the diode based MMIC mixer with other functions on the same chip is possible.<>
Keywords :
III-V semiconductors; MMIC; Schottky-barrier diodes; gallium arsenide; mixers (circuits); 12 GHz; 6 to 18 GHz; 7.5 dB; GaAs; MMIC mixer; SHF; Schottky diodes; coupled-line baluns; double balanced mixer; Bandwidth; Gallium arsenide; Impedance matching; MMICs; Microwave integrated circuits; Radio frequency; Scattering parameters; Schottky diodes; Solid state circuits; Testing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172631
