A novel, high resolution, non-contact channel temperature measurement technique

Author

Kim, Q. ; Stark, B. ; Kayali, S.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

fYear

1998

fDate

March 31 1998-April 2 1998

Firstpage

108

Lastpage

112

Abstract

An in-situ optical technique based on infrared emission spectroscopy has been developed for noncontact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). This method was demonstrated on powered and unpowered GaAs MESFETs, attaining a spatial resolution of 0.5 /spl mu/m.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; infrared spectra; semiconductor device testing; spectral methods of temperature measurement; GaAs; GaAs MESFET; GaAs metal/semiconductor field effect transistor; gate channel hotspot temperature; in-situ optical technique; infrared emission spectroscopy; noncontact channel temperature measurement technique; noncontact temperature measurement; powered GaAs MESFETs; spatial resolution; unpowered GaAs MESFETs; Excitons; Gallium arsenide; Infrared spectra; MESFETs; Semiconductor materials; Space technology; Spatial resolution; Stimulated emission; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International

Conference_Location

Reno, NV, USA

Print_ISBN

0-7803-4400-6

Type

conf

DOI

10.1109/RELPHY.1998.670458

Filename

670458