Title :
A novel, high resolution, non-contact channel temperature measurement technique
Author :
Kim, Q. ; Stark, B. ; Kayali, S.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
March 31 1998-April 2 1998
Abstract :
An in-situ optical technique based on infrared emission spectroscopy has been developed for noncontact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). This method was demonstrated on powered and unpowered GaAs MESFETs, attaining a spatial resolution of 0.5 /spl mu/m.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; infrared spectra; semiconductor device testing; spectral methods of temperature measurement; GaAs; GaAs MESFET; GaAs metal/semiconductor field effect transistor; gate channel hotspot temperature; in-situ optical technique; infrared emission spectroscopy; noncontact channel temperature measurement technique; noncontact temperature measurement; powered GaAs MESFETs; spatial resolution; unpowered GaAs MESFETs; Excitons; Gallium arsenide; Infrared spectra; MESFETs; Semiconductor materials; Space technology; Spatial resolution; Stimulated emission; Temperature dependence; Temperature measurement;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location :
Reno, NV, USA
Print_ISBN :
0-7803-4400-6
DOI :
10.1109/RELPHY.1998.670458
