Title :
A single-chip K-band receiver
Author :
Yang, H. ; Angel, K.W. ; Fry, K.N.
Author_Institution :
Magnavox Gov. & Ind. Electron. Co., Torrance, CA, USA
Abstract :
A high-complexity, single-chip K-band receiver, implemented in a GaAs MESFET IC, is demonstrated. This chip contains an RF amplifier, a dual-gate mixer, a rat-race hybrid, a balanced FET doubler, an L-band IF amplifier, and an on-chip filter. The chip size is 110*160 square mils. The chip shows an RF to IF conversion gain of 30 dB, and the spurious response at least 50 dB lower than the signal. The DC power consumption for this single-chip receiver is 580 mW.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; radio receivers; 30 dB; 580 mW; DC power consumption; GaAs; K-band receiver; L-band IF amplifier; MESFET IC; MMIC; RF amplifier; RF to IF conversion gain; balanced FET doubler; dual-gate mixer; on-chip filter; rat-race hybrid; single chip type; Bonding; Distributed parameter circuits; Equivalent circuits; FETs; Filters; Gallium arsenide; K-band; Power transmission lines; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172633
