DocumentCode
2799623
Title
The effect of the post-metallization annealing of Ni/n-type 4H-SiC SCHOTTKY contact
Author
Pascu, R. ; Craciunoiu, F. ; Kusko, Mihai ; Draghici, F. ; Dinescu, Adrian ; Danila, M.
Author_Institution
Nat. Inst. for R&D in Microtechnol. (IMT Bucharest), Bucharest, Romania
Volume
2
fYear
2012
fDate
15-17 Oct. 2012
Firstpage
457
Lastpage
460
Abstract
The Schottky diode for temperature sensor based on 4H-SiC is presented. This paper is focused on the improvement of the Schottky contact and interface stabilization using an annealing in Ar atmosphere. The diodes have been measured in range of temperature 50-150°C.
Keywords
Schottky barriers; Schottky diodes; annealing; interface structure; metallisation; silicon compounds; temperature sensors; wide band gap semiconductors; Ar atmosphere; Ni-n-type 4H-SiC Schottky contact; Schottky contact improvement; Schottky diode; SiC; interface stabilization; post-metallization annealing effect; temperature 50 degC to 150 degC; temperature sensor; Nickel; Schottky barriers; Schottky diodes; Silicon carbide; Temperature; Temperature measurement; Temperature sensors; Schottky Barriere Diode (SBD); Schottky contact; silicon carbide (SiC);
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2012 International
Conference_Location
Sinaia
ISSN
1545-857X
Print_ISBN
978-1-4673-0737-6
Type
conf
DOI
10.1109/SMICND.2012.6400732
Filename
6400732
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