Title :
The effect of the post-metallization annealing of Ni/n-type 4H-SiC SCHOTTKY contact
Author :
Pascu, R. ; Craciunoiu, F. ; Kusko, Mihai ; Draghici, F. ; Dinescu, Adrian ; Danila, M.
Author_Institution :
Nat. Inst. for R&D in Microtechnol. (IMT Bucharest), Bucharest, Romania
Abstract :
The Schottky diode for temperature sensor based on 4H-SiC is presented. This paper is focused on the improvement of the Schottky contact and interface stabilization using an annealing in Ar atmosphere. The diodes have been measured in range of temperature 50-150°C.
Keywords :
Schottky barriers; Schottky diodes; annealing; interface structure; metallisation; silicon compounds; temperature sensors; wide band gap semiconductors; Ar atmosphere; Ni-n-type 4H-SiC Schottky contact; Schottky contact improvement; Schottky diode; SiC; interface stabilization; post-metallization annealing effect; temperature 50 degC to 150 degC; temperature sensor; Nickel; Schottky barriers; Schottky diodes; Silicon carbide; Temperature; Temperature measurement; Temperature sensors; Schottky Barriere Diode (SBD); Schottky contact; silicon carbide (SiC);
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400732
