Title :
A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology
Author :
Grider, D.E. ; Mactaggart, I.R. ; Nohava, J.C. ; Stronczer, J.J. ; Ruden, P.P. ; Nohava, T.E. ; Fulkerson, D. ; Tetzlaff, D.E.
Author_Institution :
Honeywell, Bloomington, MN, USA
Abstract :
Delta-doped pseudomorphic In/sub y/Ga/sub 1-y/As channel complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed for LSI complementary circuits which exhibit extremely low power dissipation while maintaining the high-speed operation characteristic of III-V heterostructure FETs. Using C-HIGFET ring oscillators with 1 mu m gate lengths, a gate delay of 206 ps was obtained with a gate standby power of only 3.96 mu W/gate and a switching-power-delay product of 145 fJ/gate. The authors have also fabricated fully functional 1 K*4 static random access memories (SRAMs) using this delta-doped C-HIGFET technology. The synchronous 1 K*4 SRAMs operate at a clock frequency of 284 MHz with a total power dissipation of only 183 mW.<>
Keywords :
SRAM chips; field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; large scale integration; 1 micron; 183 mW; 206 ps; 284 MHz; 4 kbit; HIGFET technology; LSI complementary circuits; complementary heterostructure; delta doping; high-speed operation; insulated gate field effect transistor; pseudomorphic In/sub y/Ga/sub 1-y/As channel; ring oscillators; static random access memory; synchronous SRAM; Circuits; FETs; HEMTs; III-V semiconductor materials; Insulation; Large scale integration; MODFETs; Power dissipation; Ring oscillators; SRAM chips;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172636
