• DocumentCode
    2799686
  • Title

    Two-phase dynamic FET logic: an extremely low power, high speed logic family for GaAs VLSI

  • Author

    Nary, K.R. ; Long, S.I.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • fYear
    1991
  • fDate
    20-23 Oct. 1991
  • Firstpage
    83
  • Lastpage
    86
  • Abstract
    A GaAs logic family that provides extremely low power dissipation, high density, and the full spectrum of logic circuit possibilities is described. It is implemented with a standard e/d MESFET foundry process. Two-phase dynamic FET logic (TDFL) is shown to operate up to 1 GHz with an extremely low power dissipation of approximately 30 nW/MHz-gate. It is self latching, lending itself to highly efficient implementations of pipelined systems. Finally, it is directly compatible with static DCFL (direct coupled FET logic) making its introduction into high speed systems very straightforward.<>
  • Keywords
    VLSI; field effect integrated circuits; gallium arsenide; integrated logic circuits; 1 GHz; 30 nW; GaAs; MESFET foundry process; TDFL; VLSI; high density; high speed logic family; low power logic family; pipelined systems; self latching; two-phase dynamic FET logic; Clocks; FETs; Gallium arsenide; Inverters; Logic circuits; Logic gates; MESFETs; Ocean temperature; Power dissipation; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    0-7803-0196-X
  • Type

    conf

  • DOI
    10.1109/GAAS.1991.172639
  • Filename
    172639