Title :
Physics-based compact modeling for nonclassical CMOS
Author :
Trivedi, V.P. ; Fossum, J.G. ; Mathew, L. ; Chowdhury, M.M. ; Zhang, W. ; Workman, G.O. ; Nguyen, B.Y.
Author_Institution :
Freescale Semicond., Austin, TX, USA
Abstract :
Physics-based compact modeling, as opposed to the conventional empirical approach, is emphasized for nanoscale nonclassical CMOS. UFDG, a physics-based compact model for generic double-gate MOSFETs with ultra-thin bodies, is overviewed, and its applications to double- and (multiple) independent-gate FinFET device and circuit design are demonstrated.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit design; semiconductor device models; FinFET device; circuit design; double-gate MOSFET; nanoscale CMOS; nonclassical CMOS; physics-based compact model; ultra-thin bodies; Eigenvalues and eigenfunctions; Electric potential; FinFETs; MOSFET circuits; Poisson equations; Polynomials; Semiconductor device modeling; Semiconductor process modeling; Spline; Voltage;
Conference_Titel :
Computer-Aided Design, 2005. ICCAD-2005. IEEE/ACM International Conference on
Print_ISBN :
0-7803-9254-X
DOI :
10.1109/ICCAD.2005.1560066
