Physics-based compact modeling for nonclassical CMOS

Author

Trivedi, V.P. ; Fossum, J.G. ; Mathew, L. ; Chowdhury, M.M. ; Zhang, W. ; Workman, G.O. ; Nguyen, B.Y.

Author_Institution

Freescale Semicond., Austin, TX, USA

fYear

2005

fDate

6-10 Nov. 2005

Firstpage

211

Lastpage

216

Abstract

Physics-based compact modeling, as opposed to the conventional empirical approach, is emphasized for nanoscale nonclassical CMOS. UFDG, a physics-based compact model for generic double-gate MOSFETs with ultra-thin bodies, is overviewed, and its applications to double- and (multiple) independent-gate FinFET device and circuit design are demonstrated.

Keywords

CMOS integrated circuits; MOSFET; integrated circuit design; semiconductor device models; FinFET device; circuit design; double-gate MOSFET; nanoscale CMOS; nonclassical CMOS; physics-based compact model; ultra-thin bodies; Eigenvalues and eigenfunctions; Electric potential; FinFETs; MOSFET circuits; Poisson equations; Polynomials; Semiconductor device modeling; Semiconductor process modeling; Spline; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer-Aided Design, 2005. ICCAD-2005. IEEE/ACM International Conference on

Print_ISBN

0-7803-9254-X

Type

conf

DOI

10.1109/ICCAD.2005.1560066

Filename

1560066

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2799687