DocumentCode
2799703
Title
Low power and highly reliable gates using arrays of optimally sized transistors
Author
Beiu, Valeriu ; Iordaconiu, L. ; Beg, Azam ; Ibrahim, Wubshet ; Kharbash, Fekri
Author_Institution
Fac. of Inf. Technol., United Arab Emirates Univ., Abu Dhabi, United Arab Emirates
Volume
2
fYear
2012
fDate
15-17 Oct. 2012
Firstpage
433
Lastpage
436
Abstract
This paper introduces an enabling transistor sizing method for classical CMOS gates in advanced technology nodes through simple examples. The well-known CMOS inverter is used here both for presenting the different sizing options as well as for simulations for weighting performances. These preliminary results show that sizing is far from exhausting its potential as still allowing to: (i) improve delay and power; (ii) increase the static noise margins (SNMs); (iii) modify threshold voltages (VTH); and also (iv) reduce VTH variations (σVTH).
Keywords
CMOS integrated circuits; logic gates; low-power electronics; transistors; CMOS gates; CMOS inverter; VTH variation reduction; highly reliable gates; low power gates; static noise margins; threshold voltages; transistor arrays; transistor sizing method; CMOS integrated circuits; Integrated circuit reliability; Inverters; Logic gates; MOS devices; Transistors; CMOS; arrays; inverter; power; sizing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2012 International
Conference_Location
Sinaia
ISSN
1545-857X
Print_ISBN
978-1-4673-0737-6
Type
conf
DOI
10.1109/SMICND.2012.6400738
Filename
6400738
Link To Document