DocumentCode :
2799703
Title :
Low power and highly reliable gates using arrays of optimally sized transistors
Author :
Beiu, Valeriu ; Iordaconiu, L. ; Beg, Azam ; Ibrahim, Wubshet ; Kharbash, Fekri
Author_Institution :
Fac. of Inf. Technol., United Arab Emirates Univ., Abu Dhabi, United Arab Emirates
Volume :
2
fYear :
2012
fDate :
15-17 Oct. 2012
Firstpage :
433
Lastpage :
436
Abstract :
This paper introduces an enabling transistor sizing method for classical CMOS gates in advanced technology nodes through simple examples. The well-known CMOS inverter is used here both for presenting the different sizing options as well as for simulations for weighting performances. These preliminary results show that sizing is far from exhausting its potential as still allowing to: (i) improve delay and power; (ii) increase the static noise margins (SNMs); (iii) modify threshold voltages (VTH); and also (iv) reduce VTH variations (σVTH).
Keywords :
CMOS integrated circuits; logic gates; low-power electronics; transistors; CMOS gates; CMOS inverter; VTH variation reduction; highly reliable gates; low power gates; static noise margins; threshold voltages; transistor arrays; transistor sizing method; CMOS integrated circuits; Integrated circuit reliability; Inverters; Logic gates; MOS devices; Transistors; CMOS; arrays; inverter; power; sizing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
ISSN :
1545-857X
Print_ISBN :
978-1-4673-0737-6
Type :
conf
DOI :
10.1109/SMICND.2012.6400738
Filename :
6400738
Link To Document :
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