Title :
Low power and highly reliable gates using arrays of optimally sized transistors
Author :
Beiu, Valeriu ; Iordaconiu, L. ; Beg, Azam ; Ibrahim, Wubshet ; Kharbash, Fekri
Author_Institution :
Fac. of Inf. Technol., United Arab Emirates Univ., Abu Dhabi, United Arab Emirates
Abstract :
This paper introduces an enabling transistor sizing method for classical CMOS gates in advanced technology nodes through simple examples. The well-known CMOS inverter is used here both for presenting the different sizing options as well as for simulations for weighting performances. These preliminary results show that sizing is far from exhausting its potential as still allowing to: (i) improve delay and power; (ii) increase the static noise margins (SNMs); (iii) modify threshold voltages (VTH); and also (iv) reduce VTH variations (σVTH).
Keywords :
CMOS integrated circuits; logic gates; low-power electronics; transistors; CMOS gates; CMOS inverter; VTH variation reduction; highly reliable gates; low power gates; static noise margins; threshold voltages; transistor arrays; transistor sizing method; CMOS integrated circuits; Integrated circuit reliability; Inverters; Logic gates; MOS devices; Transistors; CMOS; arrays; inverter; power; sizing;
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400738