Diode-HBT-logic circuits monolithically integrable with ECL/CML circuits

Author

Wang, K.C. ; Beccue, S.M. ; Chang, M.F. ; Nubling, R.B. ; Cappon, A. ; Tsen, T. ; Chen, D.M. ; Asbeck, P.M. ; Kwok, C.Y.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

91

Lastpage

94

Abstract

A description is provided of a novel logic approach, diode-HBT-logic (DHL), that is implemented with GaAlAs-GaAs HBTs and Schottky diodes to provide high density and low power digital circuit operation. This logic family has been realized with the same technology used to produce ECL/CML circuits. The logic operation is demonstrated with a ring oscillator, consisting of 19 stages of bilevel DHL gates. A gate delay of 160 ps was measured with 1.1 mW of power per gate. Layouts of a DHL flip-flop and divider have shown that circuit area and transistor count can be reduced by about a factor of 3, relative to ECL/CML circuits.<>

Keywords

Schottky-barrier diodes; bipolar integrated circuits; flip-flops; heterojunction bipolar transistors; integrated logic circuits; 160 ps; CML; ECL; GaAlAs-GaAs; Schottky diodes; bilevel DHL gates; diode-HBT-logic; divider; flip-flop; gate delay; high density; low power digital circuit operation; ring oscillator; Clamps; DH-HEMTs; Delay; Digital circuits; Gallium arsenide; Heterojunction bipolar transistors; Logic arrays; Logic circuits; Schottky diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172641

Filename

172641