Title :
Diode-HBT-logic circuits monolithically integrable with ECL/CML circuits
Author :
Wang, K.C. ; Beccue, S.M. ; Chang, M.F. ; Nubling, R.B. ; Cappon, A. ; Tsen, T. ; Chen, D.M. ; Asbeck, P.M. ; Kwok, C.Y.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Abstract :
A description is provided of a novel logic approach, diode-HBT-logic (DHL), that is implemented with GaAlAs-GaAs HBTs and Schottky diodes to provide high density and low power digital circuit operation. This logic family has been realized with the same technology used to produce ECL/CML circuits. The logic operation is demonstrated with a ring oscillator, consisting of 19 stages of bilevel DHL gates. A gate delay of 160 ps was measured with 1.1 mW of power per gate. Layouts of a DHL flip-flop and divider have shown that circuit area and transistor count can be reduced by about a factor of 3, relative to ECL/CML circuits.<>
Keywords :
Schottky-barrier diodes; bipolar integrated circuits; flip-flops; heterojunction bipolar transistors; integrated logic circuits; 160 ps; CML; ECL; GaAlAs-GaAs; Schottky diodes; bilevel DHL gates; diode-HBT-logic; divider; flip-flop; gate delay; high density; low power digital circuit operation; ring oscillator; Clamps; DH-HEMTs; Delay; Digital circuits; Gallium arsenide; Heterojunction bipolar transistors; Logic arrays; Logic circuits; Schottky diodes; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172641
