• DocumentCode
    2799712
  • Title

    Unconventional transistor sizing for reducing power alleviates threshold voltage variations

  • Author

    Beg, Azam ; Beiu, Valeriu ; Ibrahim, Wubshet

  • Author_Institution
    Fac. of Inf. Technol., United Arab Emirates Univ., Abu Dhabi, United Arab Emirates
  • Volume
    2
  • fYear
    2012
  • fDate
    15-17 Oct. 2012
  • Firstpage
    429
  • Lastpage
    432
  • Abstract
    Digital circuits can be synthesized with only NANDs or NORs, while delay and power can be quite different. Scaling transistors increases their sensitivity to variations and in particular to threshold voltage variations (σVTH). Sizing transistors trades delay versus power, while unconventional sizing (e.g., L >; Lmin, W/L <; 1, fine-grained increments, multifinger FETs) was proposed recently for reducing power and also σVTH. Using Monte Carlo simulations we perform an analysis of how sensitive the output voltages of NAND-2 and NOR-2 are to increasing L over Lmin, and examine how such sizing affects delay, power, and power-delay-product of these two gates.
  • Keywords
    Monte Carlo methods; NAND circuits; NOR circuits; scaling circuits; transistor circuits; σVTH; Monte Carlo simulations; NAND-2; NOR-2; digital circuits; output voltages; power reduction; scaling transistors; sizing affects; sizing transistors; threshold voltage variations; trades delay; unconventional transistor sizing; CMOS integrated circuits; Delay; Logic gates; Reliability; Semiconductor device modeling; Standards; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2012 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-857X
  • Print_ISBN
    978-1-4673-0737-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2012.6400739
  • Filename
    6400739