DocumentCode
2799712
Title
Unconventional transistor sizing for reducing power alleviates threshold voltage variations
Author
Beg, Azam ; Beiu, Valeriu ; Ibrahim, Wubshet
Author_Institution
Fac. of Inf. Technol., United Arab Emirates Univ., Abu Dhabi, United Arab Emirates
Volume
2
fYear
2012
fDate
15-17 Oct. 2012
Firstpage
429
Lastpage
432
Abstract
Digital circuits can be synthesized with only NANDs or NORs, while delay and power can be quite different. Scaling transistors increases their sensitivity to variations and in particular to threshold voltage variations (σVTH). Sizing transistors trades delay versus power, while unconventional sizing (e.g., L >; Lmin, W/L <; 1, fine-grained increments, multifinger FETs) was proposed recently for reducing power and also σVTH. Using Monte Carlo simulations we perform an analysis of how sensitive the output voltages of NAND-2 and NOR-2 are to increasing L over Lmin, and examine how such sizing affects delay, power, and power-delay-product of these two gates.
Keywords
Monte Carlo methods; NAND circuits; NOR circuits; scaling circuits; transistor circuits; σVTH; Monte Carlo simulations; NAND-2; NOR-2; digital circuits; output voltages; power reduction; scaling transistors; sizing affects; sizing transistors; threshold voltage variations; trades delay; unconventional transistor sizing; CMOS integrated circuits; Delay; Logic gates; Reliability; Semiconductor device modeling; Standards; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2012 International
Conference_Location
Sinaia
ISSN
1545-857X
Print_ISBN
978-1-4673-0737-6
Type
conf
DOI
10.1109/SMICND.2012.6400739
Filename
6400739
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