Logic circuits using resonant-tunneling hot electron transistors (RHETs)

Author

Takatsu, M. ; Imamura, K. ; Ohnishi, H. ; Mori, T. ; Adachihara, T. ; Muto, S. ; Yokoyama, N.

Author_Institution

Fujitsu Ltd., Atsugi, Japan

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

95

Lastpage

98

Abstract

A full adder and 1/2 frequency divider using resonant-tunneling hot electron transistors (RHETs) have been proposed and demonstrated. These circuits make the best use of negative differential conductance, a feature of RHETs, and contain fewer transistors than used in conventional circuits. The RHETs were fabricated using self-aligned InGaAs RHETs and WSiN thin-film resistors on a single chip. The RHETs have an i-InGaAlAs/i-InGaAs collector barrier that improves the current gain at low collector-base voltages. Circuit operation was confirmed at 77 K.<>

Keywords

adders; bipolar integrated circuits; frequency dividers; hot electron transistors; integrated logic circuits; resonant tunnelling devices; 1/2 frequency divider; 77 K; InGaAs-InGaAlAs; RHETs; WSiN thin film resistors; full adder; i-InGaAlAs/i-InGaAs collector barrier; negative differential conductance; resonant-tunneling hot electron transistors; self-aligned devices; Adders; Electrons; Frequency conversion; Indium gallium arsenide; Logic circuits; Low voltage; Resistors; Resonant frequency; Resonant tunneling devices; Thin film circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172642

Filename

172642