DocumentCode
2799752
Title
Fabrication and characteristics of GaAs/AlGaAs tunable laser diodes with DBR and phase control regions integrated by compositional disordering of quantum well
Author
Hirata, T. ; Maeda, M. ; Suehiro, M. ; Hosomatsu, H.
Author_Institution
Optical Measurement Technology Development Co. Ltd.
fYear
1990
fDate
9-14 Sept. 1990
Firstpage
246
Lastpage
247
Keywords
Diode lasers; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Gallium arsenide; Optical device fabrication; Optical variables control; Optical waveguides; Phase control; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location
Davos, Switzerland
Type
conf
DOI
10.1109/ISLC.1990.764512
Filename
764512
Link To Document