DocumentCode :
2799752
Title :
Fabrication and characteristics of GaAs/AlGaAs tunable laser diodes with DBR and phase control regions integrated by compositional disordering of quantum well
Author :
Hirata, T. ; Maeda, M. ; Suehiro, M. ; Hosomatsu, H.
Author_Institution :
Optical Measurement Technology Development Co. Ltd.
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
246
Lastpage :
247
Keywords :
Diode lasers; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Gallium arsenide; Optical device fabrication; Optical variables control; Optical waveguides; Phase control; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
Type :
conf
DOI :
10.1109/ISLC.1990.764512
Filename :
764512
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2799752
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