Title :
High-speed, low-voltage complementary heterostructure FET circuit technology
Author :
Kiehl, R.A. ; Yates, J. ; Palmateer, L.F. ; Wright, S.L. ; Frank, D.J. ; Jackson, T.N. ; DeGelormo, J.F. ; Fleischman, A.J.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A III-V complementary heterostructure FET circuit technology which offers high-speed at low supply voltages has been demonstrated. This circuit technology is based on the vertical integration of p-channel quantum-well FETs with n-channel FETs fabricated in the underlying layers of a single-growth AlGaAs-GaAs structure. Key features of the p-FET heterostructure design and fabrication technology are discussed, and results on the electrical characteristics and the performance of high-speed ring oscillator circuits are presented. Delays of 144 and 59 ps are obtained in 0.8 and 0.5 mu m gate-length circuits at a 1.25 V supply, which are the fastest speeds yet reported for room-temperature complementary heterostructure FET circuits at low supply voltages.<>
Keywords :
field effect integrated circuits; integrated circuit technology; 0.5 micron; 0.8 micron; 1.25 V; 144 ps; 59 ps; AlGaAs-GaAs; III-V semiconductors; LV type; electrical characteristics; fabrication technology; gate delays; high-speed; low-voltage complementary heterostructure FET circuit; n-channel FETs; p-channel quantum-well FETs; ring oscillator circuits; vertical integration; Annealing; Circuit testing; Doping; Epitaxial growth; FET circuits; Fabrication; Gallium arsenide; Impurities; Integrated circuit technology; Transconductance;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172644
