Title :
Design of a 1-GHz self-resonance integrated GaAs gyrator-C inductor
Author :
Wu, Pan ; Schaumann, Rolf
Author_Institution :
Dept. of Electr. & Comput. Eng., Portland State Univ., OR, USA
Abstract :
The design considerations for achieving optimal results in gyrator-C inductor performance are discussed. According to the roles the operational transconductance amplifiers (OTAs) play in a gyrator-C inductor, general rules are set for an appropriate choice of the different parameters in the OTAs used. By applying these rules, the OTA circuitry is simplified and a gyrator-C inductor with 1 GHz self-resonance frequency, high self-resonance quality factor, higher inductor-Q, and very low parasitic parameters is designed by using 1 μm GaAs depletion-mode MESFETs. As an application of this inductor, a simulated RLC bandpass filter is realized for obtaining 930 MHz center frequency with a tuning range of 20%
Keywords :
III-V semiconductors; Q-factor; active networks; circuit resonance; field effect integrated circuits; gallium arsenide; inductors; linear integrated circuits; operational amplifiers; 1 GHz; 1 micron; 930 MHz; GaAs; OTA circuitry; depletion-mode MESFETs; gyrator-C inductor; operational transconductance amplifiers; self-resonance frequency; self-resonance quality factor; simulated RLC bandpass filter; Circuit simulation; Frequency; Gallium arsenide; Inductors; MESFETs; Operational amplifiers; Q factor; RLC circuits; Transconductance; VHF circuits;
Conference_Titel :
Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on
Conference_Location :
Calgary, Alta.
Print_ISBN :
0-7803-0081-5
DOI :
10.1109/MWSCAS.1990.140728
