New pseudomorphic N/sup -//N/sup +/ GaAs/InGaAs/GaAs power HEMT with high breakdown voltages

Author

Fujii, T. ; Sakamoto, S. ; Sonoda, T. ; Kasai, N. ; Tsuji, S. ; Yamanouchi, M. ; Takamiya, S. ; Kashimoto, Y.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

109

Lastpage

112

Abstract

A pseudomorphic N/sup -//N/sup +/GaAs/InGaAs/GaAs power HEMT (high electron mobility transistor) with high breakdown voltages (VB) of more than 20 V and full channel current of 460 mA/mm is described. This power HEMT allows the simultaneous improvement of output power (P/sub out/), linear gain (G/sub L/), and power-added efficiency (N/sub add/) over GaAs FETs. A record maximum output power of 4.7 W at 14.25 GHz was achieved by a large 10.5-mm-wide HEMT chip with G/sub L/ of 8 dB and N/sub add/ of 25%.<>

Keywords

III-V semiconductors; electric breakdown of solids; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 14.25 GHz; 20 V; 25 percent; 4.7 W; 8 dB; GaAs-InGaAs-GaAs; high breakdown voltages; high electron mobility transistor; power HEMT; pseudomorphic device; Breakdown voltage; Doping; Electrons; FETs; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; Positron emission tomography; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172646

Filename

172646