Substrate leakage current influence on bandgap voltage references in automotive applications

Author

Radoias, L. ; Zegheru, C. ; Brezeanu, G.

Author_Institution

INFINEON Technol. Romania, Bucharest, Romania

Volume

2

fYear

2012

fDate

15-17 Oct. 2012

Firstpage

389

Lastpage

392

Abstract

This paper presents a study of the influence of the substrate leakage current on the output voltage of a well-known bandgap architecture with second order compensation. In addition, an analytical approach for the output voltage is provided. The bandgap voltage reference has been successfully implemented in a standard BiCMOS technology on an effective area of 0.07mm². A low quiescent current of 4μA and a very small variation of the output voltage have been achieved over the whole temperature range by eliminating the effect of the leakage current. Therefore, a variation of 3mV has been measured for the whole operating temperature range (-40°C to 170°C).

Keywords

BiCMOS integrated circuits; compensation; leakage currents; reference circuits; automotive application; bandgap voltage reference; current 4 muA; low quiescent current; second order compensation; standard BiCMOS technology; substrate leakage current elimination; temperature -40 degC to 170 degC; voltage 3 mV; well-known bandgap architecture; BiCMOS integrated circuits; Leakage current; Photonic band gap; Substrates; Temperature distribution; Temperature measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2012 International

Conference_Location

Sinaia

ISSN

1545-857X

Print_ISBN

978-1-4673-0737-6

Type

conf

DOI

10.1109/SMICND.2012.6400752

Filename

6400752