High power operation of GaAs and AlGaAs single quantum well broad-area laser diodes for Nd: YAG laser pumping

Author

Shigihara, K. ; Shima, A. ; Nagai, Y. ; Takami, A. ; Karakida, S. ; Kokubo, Y. ; Matsubara, H. ; Kakimoto, S.

Author_Institution

Mitsubishi Electric Corporation

fYear

1990

fDate

9-14 Sept. 1990

Firstpage

274

Lastpage

275

Keywords

Diode lasers; Gallium arsenide; Life testing; Mirrors; Neodymium; Power generation; Power lasers; Pump lasers; Reflectivity; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International

Conference_Location

Davos, Switzerland

Type

DOI

10.1109/ISLC.1990.764523

Filename

764523

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