DocumentCode :
280004
Title :
GaAs MSI circuit design for communication systems
Author :
Haigh, D.G. ; Toumazou, C.
Author_Institution :
Dept. of Electr. & Electr. Eng., Univ. Coll., London, UK
fYear :
1990
fDate :
33003
Firstpage :
42491
Lastpage :
511
Abstract :
Gallium Arsenide (GaAs) technology has been successfully applied to the realisation of switched capacitor (SC) circuits with switching frequencies an order of magnitude above the maximum achieved using CMOS technology. Experimental results which confirm the accurate performance of a second order bandpass filter operating with a 300 MHz switching frequency have been recently achieved. After briefly reviewing these results, this contribution will look forward from this standpoint towards application of the experience gained through that work to meet important emerging requirements in the area of modern broadband monolithic communication systems using high frequency integrated circuit technologies
Keywords :
III-V semiconductors; band-pass filters; gallium arsenide; monolithic integrated circuits; switched capacitor filters; 300 MHz; GaAs; MSI circuit design; bandpass filter; broadband monolithic communication systems; communication systems; high frequency integrated circuit technologies; switched capacitor circuits; switching frequencies;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Analogue VLSI, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
190119
Link To Document :
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