Title :
Hydrogen sensor based on silicon carbide (SiC) MOS capacitor
Author :
Ofrim, B. ; Udrea, F. ; Brezeanu, G. ; Hsieh, A.P.
Author_Institution :
Politeh. Univ. of Bucharest, Bucharest, Romania
Abstract :
Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO2, TiO2 and ZnO) and thicknesses (50-10nm) was conducted. The TiO2 based structure has better performance than the SiO2 and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers.
Keywords :
II-VI semiconductors; MOS capacitors; gas sensors; hydrogen; interface states; silicon compounds; titanium compounds; wide band gap semiconductors; zinc compounds; C-V characteristics; H2; MOS capacitor-based hydrogen sensor; SiC-SiO2; SiC-TiO2; SiC-ZnO; chemically reactive environments; gas sensing; high temperature reactive environments; hydrogen concentration; hydrogen sensor; interface traps; size 50 nm to 10 nm; thinner oxide layers; Capacitance-voltage characteristics; Hydrogen; Interface states; MOS capacitors; Silicon carbide; Temperature; Temperature sensors; MOS capacitor; SiC; hydrogen sensor;
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400759
