Title :
CAD for GaAs IC manufacture-ability-thirteen issues in FET physics
Author :
Ladbrooke, P.H. ; Hill, A.J. ; Bridge, J.P.
Author_Institution :
GaAs Code Ltd., Cambridge, UK
Abstract :
Microwave measurements and practical data have been studied from over 30 device fabrication lines worldwide, leading to the conclusion that there are at least thirteen practically observed phenomena occurring in FETs and HEMTs (high electron mobility transistors) that are not well understood physically, but for which good mathematical-physical descriptions must be developed for yield-driven CAD. Each of the thirteen phenomena are briefly described.<>
Keywords :
CAD/CAM; III-V semiconductors; MMIC; circuit CAD; field effect integrated circuits; field effect transistors; gallium arsenide; high electron mobility transistors; integrated circuit manufacture; FET physics; GaAs; HEMTs; IC manufacturability; MMIC; mathematical-physical descriptions; microwave measurements; yield-driven CAD; Computer aided manufacturing; FET integrated circuits; Gallium arsenide; HEMTs; MODFETs; Microwave FET integrated circuits; Microwave FETs; Microwave devices; Microwave measurements; Physics;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172665
