Device testing for the development of an HBT IC process

Author

Diamond, S. ; Prasad, S.J. ; Ebner, J. ; Pubanz, G. ; Vetanen, B. ; Haynes, C. ; Park, S. ; Beers, I.

Author_Institution

Tektronix, Beaverton, OR, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

183

Lastpage

186

Abstract

A description is presented of the DC and microwave testing required for the development of an HBT (heterojunction bipolar transistor) integrated circuit process. Process control monitoring structures have been designed to allow device testing at several stages in processing. Wafer mapping of device parameters shows patterns which can help one to understand the process and improve yield. A database has been set up of device parameters. Examining the relation between various transistor parameters has led to experiments to understand the device current gain and has shown some unexpected results.<>

Keywords

MMIC; bipolar integrated circuits; integrated circuit manufacture; integrated circuit testing; microwave measurement; process control; 45 GHz; DC testing; HBT IC process; current gain; microwave testing; process control monitoring structures; wafer mapping; yield; Bipolar integrated circuits; Circuit testing; Databases; Heterojunction bipolar transistors; Integrated circuit testing; Integrated circuit yield; Microwave devices; Microwave integrated circuits; Monitoring; Process control;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172667

Filename

172667