DocumentCode :
2800150
Title :
Fabrication and characterization of an integrated schottky emitter array for multi-beam lithography applications
Author :
Tsai, Ching-Hsiang ; Ono, Takahito ; Esashi, Masayoshi
Author_Institution :
Tohoku Univ., Sendai
fYear :
2007
fDate :
21-25 Jan. 2007
Firstpage :
373
Lastpage :
376
Abstract :
The design, fabrication and characterization of an integrated Schottky emitter array are presented and demonstrated. The integrated emitter array consists of boron-doped diamond heaters with a diamond tip, Si micro gate array and Si focusing lens array. The diamond film is selectively deposited using electrophoresis of diamond seed particles and a hot filament chemical vapor deposition (HF-CVD) technique. The emitters, gate and lens array are electrically isolated from each other on a Pyrex glass substrate. When heating the diamond emitter at a voltage of 2.8 V, an emission current of 490 nA has been observed at an electric field of 0.36 V/ mum. The emission current was found to be stable with a fluctuation of 2% per hr. By fitting the measure data with Schottky emission model, the temperature at the emitter was calculated to be 1680degC.
Keywords :
chemical vapour deposition; electrophoresis; field emitter arrays; lithography; boron-doped diamond heaters; electrophoresis; fabrication; hot filament chemical vapor deposition; integrated Schottky emitter array; multibeam lithography; Chemical vapor deposition; Electrokinetics; Fabrication; Fluctuations; Glass; Lenses; Lithography; Resistance heating; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location :
Hyogo
ISSN :
1084-6999
Print_ISBN :
978-1-4244-095-5
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2007.4433145
Filename :
4433145
Link To Document :
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