Title :
A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy
Author :
De Wolf, I. ; Howard, D.J. ; Rasras, M. ; Lauwers, A. ; Maex, K. ; Groeseneken, G. ; Maes, H.E.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
March 31 1998-April 2 1998
Abstract :
Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 /spl mu/m wide TiSi/sub 2/ lines. It is shown that these techniques allow nondestructive mapping of the local phase of TiSi/sub 2/. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi/sub 2/ in the lines.
Keywords :
Raman spectra; electrical resistivity; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; nondestructive testing; optical microscopy; titanium compounds; 0.25 micron; TiSi/sub 2/; TiSi/sub 2/ lines; crystallographic phase; emission microscopy; high resistivity C49 phase TiSi/sub 2/; line resistance variation; micro-Raman spectroscopy; nondestructive TiSi/sub 2/ local phase mapping; reliability; titanium silicide lines; Conductivity; Electric resistance; Electrical resistance measurement; Microscopy; Phased arrays; Raman scattering; Silicides; Spectroscopy; Temperature; Titanium;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location :
Reno, NV, USA
Print_ISBN :
0-7803-4400-6
DOI :
10.1109/RELPHY.1998.670461
