Title :
A model of the voltage barrier in the channel of 4H-SiC normally-off JFET´s
Author :
Di Benedetto, Luigi ; Bellone, Salvatore
Author_Institution :
Dept. of Electron. & Comput. Eng., Univ. of Salerno, Salerno, Italy
Abstract :
A model of the potential barrier in the channel of normally-off 4H-SiC JFET´s is shown. It allows to evaluate the barrier height and the minority carrier density in the center of the channel for an arbitrary geometry and bias condition. The validity of the model is justified by comparing the model with numerical simulations carried out on various channel topologies.
Keywords :
geometry; junction gate field effect transistors; numerical analysis; silicon compounds; SiC; arbitrary geometry; minority carrier density; normally-off JFET; numerical simulations; voltage barrier; Doping; Electric fields; JFETs; Logic gates; Numerical models; Numerical simulation; Silicon carbide; 4H polytype of Silicon Carbide (4H-SiC); JFET; voltage barrier;
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400762
