Experimental evidence of Ti/Pt/Au-GaAs interaction obtained by means of TEM technique

Author

Magistrali, F. ; Sala, D. ; Turner, J. ; Valli, P. ; Vanzi, M.

Author_Institution

Telettra S.p.A., Vimercate Milano, Italy

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

199

Lastpage

202

Abstract

A description is presented of an investigation of a thermally activated gate-semiconductor interaction, obtained by means of the TEM technique. The correlation of this technique to the electrical measurements aids in understanding the evolution of the degradation. It is shown how only the use of TEM is effective for failure analysis when ion-implanted devices are used in connection with the Ti/Pt/Au gate.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; chemical interdiffusion; failure analysis; gallium arsenide; gold alloys; metallisation; platinum alloys; reliability; semiconductor-metal boundaries; titanium alloys; transmission electron microscope examination of materials; MESFET; TEM; TiPtAu-GaAs interaction; degradation; electrical measurements; failure analysis; ion-implanted devices; reliability; thermally activated gate-semiconductor interaction; Electric variables measurement; FETs; Failure analysis; Gallium arsenide; Gold; MMICs; Ohmic contacts; Phase change materials; Testing; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172671

Filename

172671