Title :
Monolithic integration of 5 Gbps optical receiver block for short distance communication
Author :
Takano, C. ; Tanaka, K. ; Okubora, A. ; Kasahara, J.
Author_Institution :
Sony Corp., Yokohama, Japan
Abstract :
An optical receiver block for applications such as board-to-board or chip-to-chip data communications was developed. The optical receiver block was implemented with an interdigit MSM (metal-semiconductor-metal)-type photodetector and junction FETs which were monolithically integrated on a GaAs substrate. High-speed operation of 5 Gbps was observed with a relatively low power consumption of 8.2 mW.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical interconnections; photodetectors; receivers; 5 Gbit/s; 8.2 mW; GaAs; GaAs substrate; board to board communication; chip-to-chip data communications; interdigital MSM photodetector; junction FETs; low power consumption; monolithic integration; optical receiver block; short distance communication; Data communication; FETs; Gallium arsenide; Gold; High speed optical techniques; Integrated circuit interconnections; Monolithic integrated circuits; Optical amplifiers; Optical receivers; Photodetectors;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172674
