DocumentCode
2800261
Title
Influence of ballistic effects in ultra-small MOSFETs
Author
Saint Martin, J. ; Aubry-Fortuna ; Bournel, Arnaud ; Dollfus, P. ; Galdin, S. ; Chassat, C.
Author_Institution
Univ. Paris Sud, Orsay, France
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
32
Lastpage
33
Abstract
In nanotransistors where the channel length is comparable to the electron mean free path, ballistic transport is of great importance regarding the device performance (Lundstrom and Ren, 2002). In this context, double gate MOSFET (DGMOS) with effective channel length and silicon thickness equal to 25 nm and 10 nm, respectively, has been studied using semi-classical Monte Carlo simulations to investigate the influence of ballistic electrons.
Keywords
MOSFET; Monte Carlo methods; ballistic transport; semiconductor device models; 10 nm; 25 nm; Si; ballistic effects; ballistic electrons; ballistic transport; double gate MOSFET; semi-classical Monte Carlo simulation; ultra-small MOSFET; MOSFETs; Monte Carlo methods; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location
West Lafayette, IN, USA
Print_ISBN
0-7803-8649-3
Type
conf
DOI
10.1109/IWCE.2004.1407304
Filename
1407304
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