Title :
Influence of ballistic effects in ultra-small MOSFETs
Author :
Saint Martin, J. ; Aubry-Fortuna ; Bournel, Arnaud ; Dollfus, P. ; Galdin, S. ; Chassat, C.
Author_Institution :
Univ. Paris Sud, Orsay, France
Abstract :
In nanotransistors where the channel length is comparable to the electron mean free path, ballistic transport is of great importance regarding the device performance (Lundstrom and Ren, 2002). In this context, double gate MOSFET (DGMOS) with effective channel length and silicon thickness equal to 25 nm and 10 nm, respectively, has been studied using semi-classical Monte Carlo simulations to investigate the influence of ballistic electrons.
Keywords :
MOSFET; Monte Carlo methods; ballistic transport; semiconductor device models; 10 nm; 25 nm; Si; ballistic effects; ballistic electrons; ballistic transport; double gate MOSFET; semi-classical Monte Carlo simulation; ultra-small MOSFET; MOSFETs; Monte Carlo methods; Semiconductor device modeling;
Conference_Titel :
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location :
West Lafayette, IN, USA
Print_ISBN :
0-7803-8649-3
DOI :
10.1109/IWCE.2004.1407304
