Title :
Pseudomorphic 2DEG FET ICs for ultra high-speed optical communication systems with an external optical modulator
Author :
Suzuki, Y. ; Suzaki, T. ; Ogawa, Y. ; Liu, W. ; Fujita, S. ; Okamoto, A.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
An optical modulator driver IC and a preamplifier IC for 10 Gb/s optical communication systems have been constructed. AlGaAs/InGaAs/GaAs pseudomorphic 2DEG FETs with a gate length of 0.35 mu m have implemented these ICs. The optical modulator driver IC has operated at a data rate above 10 Gb/s with a 4 V/sub P-P/ high output voltage swing. The measured bandwidth for the preamplifier IC is 13.0 GHz with a 47 dB Omega transimpedance gain.<>
Keywords :
driver circuits; field effect integrated circuits; linear integrated circuits; optical communication equipment; optical modulation; preamplifiers; 0.35 micron; 10 Gbit/s; 13 GHz; AlGaAs-InGaAs-GaAs; bandwidth; data rate; external optical modulator; gate length; high output voltage swing; optical modulator driver IC; preamplifier IC; pseudomorphic 2DEG FETs; transimpedance gain; ultra high-speed optical communication systems; FETs; Gain measurement; Gallium arsenide; High speed optical techniques; Indium gallium arsenide; Optical fiber communication; Optical modulation; Photonic integrated circuits; Preamplifiers; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172675
