Study of the Characteristics of Solid Phase Crystallized Bridged-Grain Poly-Si TFTs

Author

Wei Zhou ; Shuyun Zhao ; Rongsheng Chen ; Meng Zhang ; Ho, Jacob Y. L. ; Man Wong ; Hoi-Sing Kwok

Author_Institution

Partner State Key Lab., Adv. Displays & Optoelectron. Technol., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

Volume

61

Issue

5

fYear

2014

fDate

May-14

Firstpage

1410

Lastpage

1416

Abstract

In this paper, bridged-grain (BG) poly-Si thin-film transistors (TFTs) were fabricated. The characteristics of BG poly-Si TFTs with different BG periods and implantation schemes were investigated. The poly-Si TFTs with optimized BG structures and doping schemes demonstrated greatly improved sub-threshold slope, threshold voltage, maximum field effect mobility, leakage current, and ON/OFF ratio.

Keywords

crystallisation; elemental semiconductors; ion implantation; leakage currents; silicon; thin film transistors; Si; doping schemes; leakage current; maximum field effect mobility; optimized BG structures; poly-silicon thin film transistors; solid phase crystallized bridged-grain; subthreshold slope; threshold voltage; Doping; Gratings; Leakage currents; Resists; Scattering; Thin film transistors; Bridged grain (BG); polycrystalline silicon; thin-film transistors (TFTs); thin-film transistors (TFTs).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2308579

Filename

6763049