Title :
Study of the Characteristics of Solid Phase Crystallized Bridged-Grain Poly-Si TFTs
Author :
Wei Zhou ; Shuyun Zhao ; Rongsheng Chen ; Meng Zhang ; Ho, Jacob Y. L. ; Man Wong ; Hoi-Sing Kwok
Author_Institution :
Partner State Key Lab., Adv. Displays & Optoelectron. Technol., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
In this paper, bridged-grain (BG) poly-Si thin-film transistors (TFTs) were fabricated. The characteristics of BG poly-Si TFTs with different BG periods and implantation schemes were investigated. The poly-Si TFTs with optimized BG structures and doping schemes demonstrated greatly improved sub-threshold slope, threshold voltage, maximum field effect mobility, leakage current, and ON/OFF ratio.
Keywords :
crystallisation; elemental semiconductors; ion implantation; leakage currents; silicon; thin film transistors; Si; doping schemes; leakage current; maximum field effect mobility; optimized BG structures; poly-silicon thin film transistors; solid phase crystallized bridged-grain; subthreshold slope; threshold voltage; Doping; Gratings; Leakage currents; Resists; Scattering; Thin film transistors; Bridged grain (BG); polycrystalline silicon; thin-film transistors (TFTs); thin-film transistors (TFTs).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2308579
