Title :
A non-parabolic six moments model for the simulation of sub-100 nm devices
Author :
Grasser, T. ; Kosik, R. ; Jungemann, Christoph ; Kosina, H. ; Meinerzhagen, B. ; Selberherr, Siegfried
Author_Institution :
Christian Doppler Lab. for TCAD in Microelectron., Inst. for Microelectron., Vienna, Austria
Abstract :
Macroscopic transport models based on the first six moments of Boltzmann\´s equation (Grasser et al., 2001) are a natural extension to the well known drift-diffusion (DD) model (two moments) and the various hydrodynamic and energy-transport models (three or four moments) (Grasser et al., 2003). In addition to the solution variables of the energy-transport (ET) model, which are the carrier concentration n = <1> and the average energy w/sub 1/ = , the six moments (SM) model provides w/sub 2/ = . The quantity /spl beta/ = (3/5)w/sub 2//w/sub 1//sup 2/ is the kurtosis of the distribution function and indicates the deviation from a heated Maxwellian distribution for which /spl beta/ = 1 holds (for parabolic bands). Here we present results of numerical solutions of consistent DD, ET, and SM models and compare them to self-consistent analytic-band (Jacoboni and Lugli, 1989) and full-band (Jungemann and Meinerzhagen, 2003) Monte Carlo (MC) simulation results.
Keywords :
Boltzmann equation; Monte Carlo methods; carrier density; method of moments; semiconductor device models; 100 nm; Boltzmann equation; Monte Carlo simulation; carrier concentration; drift-diffusion model; energy-transport model; nonparabolic six moments model; self-consistent analytic-band simulation; self-consistent full-band simulation; Boltzmann equation; Charge carrier density; Moment methods; Monte Carlo methods; Semiconductor device modeling;
Conference_Titel :
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location :
West Lafayette, IN, USA
Print_ISBN :
0-7803-8649-3
DOI :
10.1109/IWCE.2004.1407308