DocumentCode
2800345
Title
Multi-dimensional tunneling in density-gradient theory
Author
Ancona, M.G. ; Lilja, K.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
38
Lastpage
39
Abstract
For engineering-oriented simulations of quantum confinement effects, density-gradient (DG) theory has come into wide use including in multi-dimensions. It is therefore somewhat curious that the DG description of tunneling (Ancona, 1990) has not been similarly applied to practical device simulation. The two most important explanations would seem to be: (i) questions of principle; and (ii) that the existing DG theory is restricted to one-dimensional tunneling for which quantum mechanics (e.g., NEGF) often provides a realistic alternative. In the present work our primary focus is on how tunneling problems can be treated in multi-dimensions in DG theory.
Keywords
electron density; semiconductor device models; tunnelling; density-gradient theory; device simulation; electron density; multidimensional tunneling; Charge carrier density; Semiconductor device modeling; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location
West Lafayette, IN, USA
Print_ISBN
0-7803-8649-3
Type
conf
DOI
10.1109/IWCE.2004.1407309
Filename
1407309
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