• DocumentCode
    2800345
  • Title

    Multi-dimensional tunneling in density-gradient theory

  • Author

    Ancona, M.G. ; Lilja, K.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • fYear
    2004
  • fDate
    24-27 Oct. 2004
  • Firstpage
    38
  • Lastpage
    39
  • Abstract
    For engineering-oriented simulations of quantum confinement effects, density-gradient (DG) theory has come into wide use including in multi-dimensions. It is therefore somewhat curious that the DG description of tunneling (Ancona, 1990) has not been similarly applied to practical device simulation. The two most important explanations would seem to be: (i) questions of principle; and (ii) that the existing DG theory is restricted to one-dimensional tunneling for which quantum mechanics (e.g., NEGF) often provides a realistic alternative. In the present work our primary focus is on how tunneling problems can be treated in multi-dimensions in DG theory.
  • Keywords
    electron density; semiconductor device models; tunnelling; density-gradient theory; device simulation; electron density; multidimensional tunneling; Charge carrier density; Semiconductor device modeling; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
  • Conference_Location
    West Lafayette, IN, USA
  • Print_ISBN
    0-7803-8649-3
  • Type

    conf

  • DOI
    10.1109/IWCE.2004.1407309
  • Filename
    1407309