Analytical and numerical investigation of noise in nanoscale ballistic field effect transistors

Major semiconductor companies have already announced the fabrication of perfectly functional MOSFETs with channel lengths in the range 8-15 nm. In devices with short channel lengths, ballistic transport may play a significant role (2003). In addition, the gate oxide is thinner than 1 nm, therefore tunneling through the oxide is not negligible. We focus on shot noise of the drain and gate currents in ballistic MOSFETs. The subject is of interest from the point of view of applications, since adequate models of noise in such MOSFETs are required, especially for high-frequency analog and mixed-signal applications, and from the point of view of the understanding of the underlying physics, since effects typical of mesoscopic devices can now be observed at room temperature and in silicon.