Silicon carrier-depletion-based Mach-Zehnder and ring modulators with different doping patterns for telecommunication and optical interconnect

Author

Yu, Hui ; Pantouvaki, Marianna ; Van Campenhout, Joris ; Komorowska, Katarzyna ; Dumon, Pieter ; Verheyen, Peter ; Lepage, Guy ; Absil, Philippe ; Korn, Dietmar ; Hillerkuss, David ; Leuthold, Juerg ; Baets, Roel ; Bogaerts, Wim

Author_Institution

Dept. of Inf. Technol., Ghent Univ. - IMEC, Ghent, Belgium

fYear

2012

fDate

2-5 July 2012

Firstpage

1

Lastpage

5

Abstract

In this paper, we review our progress on carrier-depletion-based silicon modulator. The lateral and the interdigitated PN junctions are optimized and then compared systematically. The comparison helps us to choose a proper doping pattern for 40 Gbit/s modulation with MZ structure and travelling wave electrode. Ring modulators with both doping patterns are able to work at 10 Gbit/s with 0.5 V_pp driving voltage. We also reduce the size of ring modulator by utilizing an asymmetrical waveguide.

Keywords

Mach-Zehnder interferometers; electro-optical modulation; electrodes; optical interconnections; optical waveguides; p-n junctions; silicon; Mach-Zehnder modulators; Si; asymmetrical waveguide; bit rate 40 Gbit/s; carrier depletion based silicon modulator; doping patterns; interdigitated PN junctions; optical interconnect; ring modulators; travelling wave electrode; voltage 0.5 V; Coplanar waveguides; Doping; Heating; Junctions; Modulation; Optical waveguides; Silicon; Mach-Zehnder interferometer; carrier depletion; coplanar waveguide; modulator; ring resonator;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2012 14th International Conference on

Conference_Location

Coventry

ISSN

2161-2056

Print_ISBN

978-1-4673-2228-7

Electronic_ISBN

2161-2056

Type

conf

DOI

10.1109/ICTON.2012.6254461

Filename

6254461