Ba(X1/3Ta2/3)O3 complex perovskites for microwave and millimeter-wave applications

Author

Nedelcu, L. ; Busuioc, C. ; Banciu, M.G. ; Ramer, Rodica

Author_Institution

Nat. Inst. of Mater. Phys., Bucharest-Magurele, Romania

Volume

2

fYear

2012

fDate

15-17 Oct. 2012

Firstpage

303

Lastpage

306

Abstract

Ba(X_1/3Ta_2/3)O₃ (X=Zn, Mg) perovskites were prepared by using the solid state reaction method. X-ray diffraction and scanning electron microscopy were employed for structural and morphological characterization of Ba(X_1/3Ta_2/3)O₃ samples. The dielectric constant of the resonators was 28 for Ba(Zn_1/3Ta_2/3)O₃ and 24 for Ba(Mg_1/3Ta_2/3)O₃. A strong influence of the cation ordering on the dielectric loss has been found. The achieved values of Q × f product, ranging from 100 to 200 THz, make Ba(X_1/3Ta_2/3)O₃ dielectric resonators attractive for microwave and millimetre-wave applications.

Keywords

X-ray diffraction; dielectric losses; dielectric resonators; X-ray diffraction; canning electron microscopy; cation ordering; complex perovskites; dielectric constant; dielectric loss; dielectric resonators; microwave application; millimeter wave application; morphological characterization; solid state reaction method; Dielectric constant; Microwave communication; Microwave filters; Microwave integrated circuits; Microwave oscillators; Ba(Mg1/3Ta2/3)O3; Ba(Zn1/3Ta2/3)O3; Complex perovskites; dielectric resonators;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2012 International

Conference_Location

Sinaia

ISSN

1545-857X

Print_ISBN

978-1-4673-0737-6

Type

conf

DOI

10.1109/SMICND.2012.6400778

Filename

6400778