High efficiency monolithic Ka-band oscillators using InAlAs/InGaAs HEMTs

Author

Kwon, Y. ; Ng, G.I. ; Pavlidis, D. ; Lai, R. ; Brock, T. ; Castagne, J. ; Linh, N.T.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

263

Lastpage

266

Abstract

The performance of monolithic integrated oscillators using submicron InAlAs/InGaAs HEMTs (high electron mobility transistors) at 35 GHz is presented. Two different types of feedback schemes were employed showing distinct bias tuning features. A large-signal analysis was performed to analyze their power characteristics. The dual feedback oscillator had an output power of 8.2 mW and showed a high DC-to-RF efficiency of 36% at 35.6 GHz.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; feedback; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave oscillators; variable-frequency oscillators; 35 GHz; 35.6 GHz; 36 percent; 8.2 mW; DC-to-RF efficiency; HEMTs; InAlAs-InGaAs; Ka-band oscillators; MMIC; bias tuning; dual feedback oscillator; feedback schemes; large-signal analysis; monolithic integrated oscillators; output power; power characteristics; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; MESFETs; MODFETs; Negative feedback; Oscillators; Performance analysis; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172687

Filename

172687