Monolithic receivers with integrated temperature compensation function

Author

Dow, G.S. ; Chen, T.H. ; Ton, T.N. ; Aust, M. ; Yonaki, J. ; Carandang, R. ; Yang, D. ; Quadrozzi, M. ; Andrews, S.S. ; Titus, W.

Author_Institution

TRW MTDO, Redondo Beach, CA, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

267

Lastpage

270

Abstract

Two highly integrated monolithic receivers were developed for X-band and S/C-band applications. Each receiver chip has integrated five single-function microcells: RF amplifier, mixer, LO driver, IF amplifier, and a novel temperature compensation/variable attenuator. The X-band receiver chip downconverts an input 6 to 10 GHz to an output 4.0 to 6.0 GHz and has exhibited a conversion gain greater than 15 dB, SSB noise figure less than 12 dB, and output IP/sub 3/ greater than 20 dBm. The S/C-band receiver chip downconverts an input 4 to 6 GHz to an output 0.5 to 1.5 GHz and has exhibited a conversion gain greater than 8.0 dB, SSB noise figure less than 7.5 dB, and output IP/sub 3/ greater than 14 dBm.<>

Keywords

MMIC; frequency convertors; receivers; 0.5 to 10 GHz; IF amplifier; LO driver; RF amplifier; S/C-band applications; SSB noise figure; X-band; conversion gain; integrated monolithic receivers; integrated temperature compensation function; mixer; single-function microcells; temperature compensation/variable attenuator; Amplitude modulation; Attenuators; Driver circuits; Frequency conversion; Gallium arsenide; Microcell networks; Mixers; Noise figure; Radiofrequency amplifiers; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172688

Filename

172688