Title :
Charging and discharging processes in ALN dielectric films deposited by plasma assisted molecular beam epitaxy
Author :
Koutsoureli, M. ; Adikimenakis, A. ; Michalas, L. ; Papandreou, E. ; Pantazis, Alexandros ; Konstantinidis, G. ; Georgakilas, A. ; Papaioannou, G.
Author_Institution :
Solid State Phys. Sect., Univ. of Athens, Athens, Greece
Abstract :
In the present work the electrical properties of AlN polycrystalline films deposited at low temperatures by plasma-assisted molecular beam epitaxy (PA-MBE) are investigated. The polarization build-up during constant current injection as well as the depolarization process after the current stress have been investigated through monitoring voltage transients in Metal-Insulator-Metal (MIM) capacitors, in temperature range from 300 K to 400 K. Moreover, current-voltage characteristics obtained at different temperatures revealed that charge collection at low fields in these films occurs through variable range hopping.
Keywords :
III-V semiconductors; aluminium compounds; dielectric depolarisation; dielectric polarisation; hopping conduction; molecular beam epitaxial growth; piezoelectric semiconductors; piezoelectric thin films; piezoelectricity; plasma materials processing; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; AlN; MIM capacitors; charge collection; charging processes; constant current injection; current stress; current-voltage characteristics; depolarization process; dielectric films; discharging processes; hopping conduction; metal-insulator-metal capacitors; plasma-assisted molecular beam epitaxy; polarization build-up; polycrystalline films; temperature 300 K to 400 K; voltage transient monitoring; Dielectrics; Films; Micromechanical devices; Stress; Temperature; Temperature measurement; Transient analysis;
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400785
